bettermopa.blogg.se - Free download bipolar junction transistor

Carrier transport in the active base region directly beneath the heavily doped (n+) emitter dominates the i-v characteristics of the BJT.

A small current also enters the base terminal, crosses the base-emitter junction and exits through the emitter.

The majority of current enters collector, crosses the base region and exits through the emitter.

The BJT consists of 3 alternating layers of n- and p-type semiconductor called emitter (E), base (B) and collector (C).Discuss bipolar current sources and the current mirror. Present a PSPICE model for the bipolar transistor.Understand the origin and modeling of the Early effect.Explore model simplifications for the forward active region.Define four operation regions of the BJT.Develop the Transport Model for bipolar devices.

Explore differences between npn and pnp transistors.

Study terminal characteristics of BJT.

Explore the physical structure of bipolar transistor.